Selective Growth and Schottky Diode Characteristics of β-SiC Single Crystal Films on Si (111) Substrates by Chemical Vapor Deposition

Katsuki FURUKAWA; Atsuko UEMOTO; Yoshihisa FUJII; Mitsuhiro SHIGETA; Akira SUZUKI; Shigeo NAKAJIMA

doi:https://doi.org/10.7567/SSDM.1987.C-4-3

[C-4-3] Selective Growth and Schottky Diode Characteristics of β-SiC Single Crystal Films on Si (111) Substrates by Chemical Vapor Deposition

Katsuki FURUKAWA, Atsuko UEMOTO, Yoshihisa FUJII, Mitsuhiro SHIGETA, Akira SUZUKI, Shigeo NAKAJIMA (1.Central Research Laboratories, Engineering Center Sharp Corporation)

https://doi.org/10.7567/SSDM.1987.C-4-3

1987 Conference on Solid State Devices and Materials

[C-4-3] Selective Growth and Schottky Diode Characteristics of β-SiC Single Crystal Films on Si (111) Substrates by Chemical Vapor Deposition