Plasma Doping into the Side-Wall of a Sub-0.5μm Width Trench

Bunji MlZUNO; Ichiroh NAKAYAMA; Nobuo AOI; Masafumi KUBOTA

doi:https://doi.org/10.7567/SSDM.1987.C-8-4

1987 Conference on Solid State Devices and Materials

1987年8月25日〜 1987年8月27日
Nippon Toshi Center, Tokyo, Japan

[C-8-4] Plasma Doping into the Side-Wall of a Sub-0.5μm Width Trench

Bunji MlZUNO、Ichiroh NAKAYAMA、Nobuo AOI、Masafumi KUBOTA (1.Semiconductor Research Center、2.Production Engineering Laboratory, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1987.C-8-4

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