[S-II-9] Low Resistive, High Aspect Ratio Via-Hole Filling System Completely Planarized by Selective W Deposition and Subsequent Etch-Back

K. Shiozaki、K. Mitsuhashi、K. Ohtake、M. Koba (1.Central Research Laboratories, Sharp Corporation)

https://doi.org/10.7567/SSDM.1987.S-II-9