[S-II-9] Low Resistive, High Aspect Ratio Via-Hole Filling System Completely Planarized by Selective W Deposition and Subsequent Etch-Back
K. Shiozaki, K. Mitsuhashi, K. Ohtake, M. Koba
(1.Central Research Laboratories, Sharp Corporation)
https://doi.org/10.7567/SSDM.1987.S-II-9