Mechanism of Si Laser Atomic Layer Epitaxy Using the Adsorption and Thermally-induced Reactions of Si2H6 on Si(100) 2x1

[A-3-4] Mechanism of Si Laser Atomic Layer Epitaxy Using the Adsorption and Thermally-induced Reactions of Si2H6 on Si(100) 2x1

Y. Suda, D. Lubben, T. Motooka, J. E. Greene (1.R&D Center, Toshiba Corporation, 2.Coordinated Science Laboratory, University of Illinois)