[A-3-4] Mechanism of Si Laser Atomic Layer Epitaxy Using the Adsorption and Thermally-induced Reactions of Si2H6 on Si(100) 2x1

Y. Suda、D. Lubben、T. Motooka、J. E. Greene (1.R&D Center, Toshiba Corporation、2.Coordinated Science Laboratory, University of Illinois)

https://doi.org/10.7567/SSDM.1989.A-3-4