A Composite lon-Implantation/Dopant Diffusion Simulation Involving Point Defect Kinetics and Its Application to Ultra Shallow Base Design

[B-2-2] A Composite lon-Implantation/Dopant Diffusion Simulation Involving Point Defect Kinetics and Its Application to Ultra Shallow Base Design

Takako K. OKADA、Koichi KATO (1.ULSI Research Center, Toshiba Corporation、2.Research and Development Center, Toshiba Corporation)