Optimization of the Amorphous Layer Thickness and the Junction Depth on the Preamorphization Method for Shallow-Junction Formation

[B-2-4] Optimization of the Amorphous Layer Thickness and the Junction Depth on the Preamorphization Method for Shallow-Junction Formation

A. Tanaka, T. Yamaji, A. Uchiyama, T. Hayashi, T. Iwabuchi, S. Nishikawa (1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)