Optimization of the Amorphous Layer Thickness and the Junction Depth on the Preamorphization Method for Shallow-Junction Formation

[B-2-4] Optimization of the Amorphous Layer Thickness and the Junction Depth on the Preamorphization Method for Shallow-Junction Formation

A. Tanaka、T. Yamaji、A. Uchiyama、T. Hayashi、T. Iwabuchi、S. Nishikawa (1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)