[B-4-2] 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs

Hisashi FUKUDA、Akira UCHIYAMA、Takahisa HAYASHI、Toshiyuki IWABUCHI、Seigo OHNO (1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)

https://doi.org/10.7567/SSDM.1989.B-4-2