[C-3-1] In0.53Ga0.47As MISFETs Having an Ultra-thin MBE Si Interface Control Layer and Photo-CVD SiO2 Insulator

M. Akazawa, H. Hasegawa, E. Ohue (1.Department of Electrical Engineering, Faculty of Engineering Hokkaido University)

https://doi.org/10.7567/SSDM.1989.C-3-1