Synchrotron Radiation Photoemission Study on (NH4)2Sx-treated n-GaAs

H. Sugahara; M. Oshima; H. Oigawa; H. Shigekawa; Y. Nannichi

doi:https://doi.org/10.7567/SSDM.1989.C-3-LN4

1989 Conference on Solid State Devices and Materials

1989年8月28日〜 1989年8月30日
Nippon Toshi Center, Tokyo, Japan

[C-3-LN4] Synchrotron Radiation Photoemission Study on (NH4)2Sx-treated n-GaAs

H. Sugahara、M. Oshima、H. Oigawa、H. Shigekawa、Y. Nannichi (1.NTT Applied Electronics Laboratories、2.Institute of Materials Science, University of Tsukuba)

https://doi.org/10.7567/SSDM.1989.C-3-LN4

▲