Low Temperature Disordering Process of ZnSe /ZnS Superlattices Using Ion Implantation

Tohru SAITOH; Toshiya YOKOGAWA; Tadashi NARUSAWA

doi:https://doi.org/10.7567/SSDM.1989.D-2-1

1989 Conference on Solid State Devices and Materials

1989年8月28日〜 1989年8月30日
Nippon Toshi Center, Tokyo, Japan

[D-2-1] Low Temperature Disordering Process of ZnSe /ZnS Superlattices Using Ion Implantation

Tohru SAITOH、Toshiya YOKOGAWA、Tadashi NARUSAWA (1.Opto-Electronics Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1989.D-2-1

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