[D-4-4] Doping Effects on the Resonant Tunneling Characteristics of InGaAs/InAlAs MQW Diodes

Y. KAWAMURA, H. ASAI, K. WAKITA, O. MIKAMI, M. NAGANUMA (1.NTT Opto-electronics Laboratories)

https://doi.org/10.7567/SSDM.1989.D-4-4