[D-4-4] Doping Effects on the Resonant Tunneling Characteristics of InGaAs/InAlAs MQW Diodes

Y. KAWAMURA、H. ASAI、K. WAKITA、O. MIKAMI、M. NAGANUMA (1.NTT Opto-electronics Laboratories)

https://doi.org/10.7567/SSDM.1989.D-4-4