High Power Operation of AlGaAs/GaAs Large-Optical-Cavity Laser Diode with ZnSxSe1-x (x=0.06) Layer Grown by Adduct-Source MOCVD Method

[D-7-3] High Power Operation of AlGaAs/GaAs Large-Optical-Cavity Laser Diode with ZnSxSe1-x (x=0.06) Layer Grown by Adduct-Source MOCVD Method

Y. Tsunekawa、K. Watanabe、T. Seki、T. Asaka、Y. Yamasaki、T. Takamura、H. Iwano (1.Electronic Device Research Dept. SEIKO EPSON CORPORATION)