High Power Operation of AlGaAs/GaAs Large-Optical-Cavity Laser Diode with ZnSxSe1-x (x=0.06) Layer Grown by Adduct-Source MOCVD Method

[D-7-3] High Power Operation of AlGaAs/GaAs Large-Optical-Cavity Laser Diode with ZnSxSe1-x (x=0.06) Layer Grown by Adduct-Source MOCVD Method

Y. Tsunekawa, K. Watanabe, T. Seki, T. Asaka, Y. Yamasaki, T. Takamura, H. Iwano (1.Electronic Device Research Dept. SEIKO EPSON CORPORATION)