A Very Low Threshold Current, 780 nm Diffusion Stripe Laser Fabricated by Open-tube, Two-step Zn Diffusion Technique

A. Shima; T. Kamizato; A. Takami; S. Karakida; K. Isshiki; H. Matsubara; H. Kumabe

doi:https://doi.org/10.7567/SSDM.1989.D-7-4

[D-7-4] A Very Low Threshold Current, 780 nm Diffusion Stripe Laser Fabricated by Open-tube, Two-step Zn Diffusion Technique

A. Shima、T. Kamizato、A. Takami、S. Karakida、K. Isshiki、H. Matsubara、H. Kumabe (1.Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.1989.D-7-4

1989 Conference on Solid State Devices and Materials

[D-7-4] A Very Low Threshold Current, 780 nm Diffusion Stripe Laser Fabricated by Open-tube, Two-step Zn Diffusion Technique