A Very Low Threshold Current, 780 nm Diffusion Stripe Laser Fabricated by Open-tube, Two-step Zn Diffusion Technique

A. Shima; T. Kamizato; A. Takami; S. Karakida; K. Isshiki; H. Matsubara; H. Kumabe

doi:https://doi.org/10.7567/SSDM.1989.D-7-4

[D-7-4] A Very Low Threshold Current, 780 nm Diffusion Stripe Laser Fabricated by Open-tube, Two-step Zn Diffusion Technique

A. Shima, T. Kamizato, A. Takami, S. Karakida, K. Isshiki, H. Matsubara, H. Kumabe (1.Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.1989.D-7-4

1989 Conference on Solid State Devices and Materials

[D-7-4] A Very Low Threshold Current, 780 nm Diffusion Stripe Laser Fabricated by Open-tube, Two-step Zn Diffusion Technique