[S-A-6] High Hole Mobility in Modulation-Doped p-Si0.5Ge0.5/Ge/Si1-x5Gex5 Hetrostructures fabricated Using Molecular Beam Epitaxy

Eiichi Murakami, Hiroyuki Etoh, Kiyokazu Nakagawa, Masanobu Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1989.S-A-6