[S-A-LN8] Formation of Non-strained Single Crystalline SiGeB/Si Heterostructure by Ge and B Ions Implantation

K. Ohta、J. Sakano、S. Furukawa (1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1989.S-A-LN8