[S-B-9] Reduction of Interface States of MOS Structure Using Photo-CVD SiO2 Film by F2 Treatment

Masakazu NAKAMURA、Masanori OKUYAMA、Yoshihiro HAMAKAWA (1.Department of Electrical Engineerirg, Faculty of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.1989.S-B-9