Elimination of Emitter-Mesa Etching and Complete Planarization of Heterojunction Bipolar Transistors via Doping Selective Base Contact and Selective Hole Epitaxy

[B-2-3] Elimination of Emitter-Mesa Etching and Complete Planarization of Heterojunction Bipolar Transistors via Doping Selective Base Contact and Selective Hole Epitaxy

T. Y. Kuo、K. W. Goossen、J. E. Cunningham、C. G. Fonstad、F. Ren、W. Jan (1.AT&T Bell Laboratories、2.Massachusetts Institute of Technology)