Elimination of Emitter-Mesa Etching and Complete Planarization of Heterojunction Bipolar Transistors via Doping Selective Base Contact and Selective Hole Epitaxy

[B-2-3] Elimination of Emitter-Mesa Etching and Complete Planarization of Heterojunction Bipolar Transistors via Doping Selective Base Contact and Selective Hole Epitaxy

T. Y. Kuo, K. W. Goossen, J. E. Cunningham, C. G. Fonstad, F. Ren, W. Jan (1.AT&T Bell Laboratories, 2.Massachusetts Institute of Technology)