The Chemical Bonding Features of Fluorine and Boron in BF2+ Ion Implanted Si

T. Kinoshita; M. Takakura; S. Miyazaki; S. Yokoyama; M. Koyanagi; M. Hirose

doi:https://doi.org/10.7567/SSDM.1990.C-10-4

[C-10-4] The Chemical Bonding Features of Fluorine and Boron in BF2+ Ion Implanted Si

T. Kinoshita, M. Takakura, S. Miyazaki, S. Yokoyama, M. Koyanagi, M. Hirose (1.Department of Electrical Engineering, Hiroshima University, 2.Research Center for Integrated Systems, Hiroshima University)

https://doi.org/10.7567/SSDM.1990.C-10-4

1990 International Conference on Solid State Devices and Materials

[C-10-4] The Chemical Bonding Features of Fluorine and Boron in BF2+ Ion Implanted Si