n+-Polysilicon Etching with Both High Anisotropy and High Selectivity by Nitrogen Chemisorption in Chlorine and Nitrogen Mixed ECR Plasma

Takashi MATSUURA; Hiroaki UETAKE; Junichi MUROTA; Koichi FUKUDA; Tadahiro OHMI; Nobuo MIKOSHIBA

doi:https://doi.org/10.7567/SSDM.1990.C-3-1

[C-3-1] n+-Polysilicon Etching with Both High Anisotropy and High Selectivity by Nitrogen Chemisorption in Chlorine and Nitrogen Mixed ECR Plasma

Takashi MATSUURA、Hiroaki UETAKE、Junichi MUROTA、Koichi FUKUDA、Tadahiro OHMI、Nobuo MIKOSHIBA (1.Department of Electronics, Faculty of Engineering, Tohoku University、2.Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1990.C-3-1

1990 International Conference on Solid State Devices and Materials

[C-3-1] n+-Polysilicon Etching with Both High Anisotropy and High Selectivity by Nitrogen Chemisorption in Chlorine and Nitrogen Mixed ECR Plasma