SOI Structures Prepared by Lateral Annealing of a-Si Films in Steep Temperature Gradient

Yasuhiro KIZU; Keiichi KONDA; Masaki TAKEUCHI; Akio KITAGAWA; Masakuni SUZUKI

doi:https://doi.org/10.7567/SSDM.1990.C-3-6

1990 International Conference on Solid State Devices and Materials

Aug 22, 1990 - Aug 24, 1990
Hotel Sendai Plaza, Sendai, Japan

[C-3-6] SOI Structures Prepared by Lateral Annealing of a-Si Films in Steep Temperature Gradient

Yasuhiro KIZU, Keiichi KONDA, Masaki TAKEUCHI, Akio KITAGAWA, Masakuni SUZUKI (1.Dept. of Electrical & Computer Engineering Faculty of Technology, Kanazawa University)

https://doi.org/10.7567/SSDM.1990.C-3-6

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