Planarized Deposition of High Quality Silicon Dioxide Film by Photo-Assisted Plasma CVD at 300℃ Using TEOS

Nobumasa SUZUKI; Kazuya MASU; Kazuo TSUBOUCHI; Nobuo MIKOSHIBA

doi:https://doi.org/10.7567/SSDM.1990.C-4-5

[C-4-5] Planarized Deposition of High Quality Silicon Dioxide Film by Photo-Assisted Plasma CVD at 300℃ Using TEOS

Nobumasa SUZUKI、Kazuya MASU、Kazuo TSUBOUCHI、Nobuo MIKOSHIBA (1.Production Engineering Research Laboratory, Canon Inc.、2.Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1990.C-4-5

1990 International Conference on Solid State Devices and Materials

[C-4-5] Planarized Deposition of High Quality Silicon Dioxide Film by Photo-Assisted Plasma CVD at 300℃ Using TEOS