Novel Transport Characteristics of One-Dimensional Quantum Subbands in Si-MOSFET&apos;s

Hideyuki MATSUOKA; Toshiyuki YOSHIMURA; Tsuneo ICHIGUCHI; Eiji TAKEDA

doi:https://doi.org/10.7567/SSDM.1990.C-8-5

1990 International Conference on Solid State Devices and Materials

Aug 22, 1990 - Aug 24, 1990
Hotel Sendai Plaza, Sendai, Japan

[C-8-5] Novel Transport Characteristics of One-Dimensional Quantum Subbands in Si-MOSFET's

Hideyuki MATSUOKA, Toshiyuki YOSHIMURA, Tsuneo ICHIGUCHI, Eiji TAKEDA (1.Central Research Laboratory, Hitachi Ltd., 2.Advanced Research Laboratory, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1990.C-8-5

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