Novel Transport Characteristics of One-Dimensional Quantum Subbands in Si-MOSFET&apos;s

Hideyuki MATSUOKA; Toshiyuki YOSHIMURA; Tsuneo ICHIGUCHI; Eiji TAKEDA

doi:https://doi.org/10.7567/SSDM.1990.C-8-5

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜 1990年8月24日
Hotel Sendai Plaza, Sendai, Japan

[C-8-5] Novel Transport Characteristics of One-Dimensional Quantum Subbands in Si-MOSFET's

Hideyuki MATSUOKA、Toshiyuki YOSHIMURA、Tsuneo ICHIGUCHI、Eiji TAKEDA (1.Central Research Laboratory, Hitachi Ltd.、2.Advanced Research Laboratory, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1990.C-8-5

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