[C-8-6] High Hole Mobility and High Sheet Hole Concentration in p-Si/SiGe Modulation Doped Heterostructures Grown by MBE

T. MISHIMA、C. W. FREDRIKSZ、G. F. A. VAN DE WALLE、D. J. GRAVESTEIJN、R. A. VAN DEN HEUVEL、A. A VAN GORKUM (1.Philips Research Laboratories、2.Exchange researcher from Hitachi CRL)

https://doi.org/10.7567/SSDM.1990.C-8-6