Thin Film Effects of Double-Gate Polysilicon MOSFET

T. Hashimoto; T. Mine; T. Yamanaka; N. Hashimoto; A. Shimizu; T. Nishida; Y. Kawamoto

doi:https://doi.org/10.7567/SSDM.1990.C-9-4

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜 1990年8月24日
Hotel Sendai Plaza, Sendai, Japan

[C-9-4] Thin Film Effects of Double-Gate Polysilicon MOSFET

T. Hashimoto、T. Mine、T. Yamanaka、N. Hashimoto、A. Shimizu、T. Nishida、Y. Kawamoto (1.Central Research Laboratory, Hitachi Ltd.、2.Hitachi VLSI Engineering Corp.)

https://doi.org/10.7567/SSDM.1990.C-9-4

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