[D-1-2] Electrical Properties of Gallium Fluoride (GaF3)/GaAs Interface with and without Sulfur Treatment

H. RICARD、K. H. KIM、K. AIZAWA、H. ISHIWARA (1.Research Laboratory of Precision Machinery and Electronics Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1990.D-1-2