Point Defects of GaAs Films on Fluoride/Si Structures and Its Reduction by 2-Step Growth Method

Atsuki ONO; Osamu ISHIYAMA; Kazuo TSUTSUI; Seijiro FURUKAWA

doi:https://doi.org/10.7567/SSDM.1990.D-2-9

[D-2-9] Point Defects of GaAs Films on Fluoride/Si Structures and Its Reduction by 2-Step Growth Method

Atsuki ONO, Osamu ISHIYAMA, Kazuo TSUTSUI, Seijiro FURUKAWA (1.Department of Applied Electronics, Graduate School of Science & Engineering, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1990.D-2-9

1990 International Conference on Solid State Devices and Materials

[D-2-9] Point Defects of GaAs Films on Fluoride/Si Structures and Its Reduction by 2-Step Growth Method