Wide-Bandgap μc-Si:H/Single-Crystalline Si Abrupt Heterojunction by Si Surface Modification

K. SASAKI; Y. KUBOTA; T. MIYAJIMA; S. FURUKAWA

doi:https://doi.org/10.7567/SSDM.1990.D-8-4

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜 1990年8月24日
Hotel Sendai Plaza, Sendai, Japan

[D-8-4] Wide-Bandgap μc-Si:H/Single-Crystalline Si Abrupt Heterojunction by Si Surface Modification

K. SASAKI、Y. KUBOTA、T. MIYAJIMA、S. FURUKAWA (1.Department of Applied Electronics, Graduate School of Science & Engineering, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1990.D-8-4

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