Improvement of the Laser-Recrystallized SOI Structure by a New Crystal Growth Mode

D. J. Wouters; T. Ipposhi; K. Sugahara; Y. Inoue; T. Nishimura; Y. Akasaka; H. E. Maes

doi:https://doi.org/10.7567/SSDM.1990.LN-D-4

1990 International Conference on Solid State Devices and Materials

1990年8月22日〜 1990年8月24日
Hotel Sendai Plaza, Sendai, Japan

[LN-D-4] Improvement of the Laser-Recrystallized SOI Structure by a New Crystal Growth Mode

D. J. Wouters、T. Ipposhi、K. Sugahara、Y. Inoue、T. Nishimura、Y. Akasaka、H. E. Maes (1.LSI R&D Lab., Mitsubishi Electric Corp.、2.Interuniversity Micro-Electronics Center (IMEC))

https://doi.org/10.7567/SSDM.1990.LN-D-4

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