[S-D-9] Influence of Strain on the Electrical Properties of Ge Channel in Modulation-Doped p-Si0.5Ge0.5/Ge/Si1-xGex Heterostructure

Hiroyuki Etoh、Eiichi Murakami、Akio Nishida、Kiyokazu Nakagawa、Masanobu Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1990.S-D-9