[S-E-9] Large Area Doping Process for Fabrication of p-Si TFT's Using Bucket Ion Source and XeCl Excimer Laser Annealing

Genshiro KAWACHI、Takashi AOYAMA、Takaya SUZUKI、Akio MIMURA、Yasunori OHNO、Nobutake KONISHI、Yasuhiro MOCHIZUKI (1.G. T. C.、2.Hitachi Research Laboratory, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1990.S-E-9