Large Area Doping Process for Fabrication of p-Si TFT&apos;s Using Bucket Ion Source and XeCl Excimer Laser Annealing

Genshiro KAWACHI; Takashi AOYAMA; Takaya SUZUKI; Akio MIMURA; Yasunori OHNO; Nobutake KONISHI; Yasuhiro MOCHIZUKI

doi:https://doi.org/10.7567/SSDM.1990.S-E-9

[S-E-9] Large Area Doping Process for Fabrication of p-Si TFT's Using Bucket Ion Source and XeCl Excimer Laser Annealing

Genshiro KAWACHI, Takashi AOYAMA, Takaya SUZUKI, Akio MIMURA, Yasunori OHNO, Nobutake KONISHI, Yasuhiro MOCHIZUKI (1.G. T. C., 2.Hitachi Research Laboratory, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1990.S-E-9

1990 International Conference on Solid State Devices and Materials

[S-E-9] Large Area Doping Process for Fabrication of p-Si TFT's Using Bucket Ion Source and XeCl Excimer Laser Annealing