[A-1-1] Hot Carrier Effects in nMOSFET at 77 K and 300 K

Toyoji YAMAMOTO, Yasushi NISHIMURA, Takahiro IIZUKA Hiroshi MATSUMOTO, Masao FUKUMA (1.Microelectronics Res. Labs., VLSI Development Div., NEC Corp., 2.NEC Scientific Information System Development Corp.)

https://doi.org/10.7567/SSDM.1991.A-1-1