[A-1-2] Low-Temperature (625℃) Silicon Epitaxial Growth on Silicon Substrates Heated-Up in SiH4 Atmosphere

K. Kobayashi、K. Fukumoto、T. Katayama、T. Higaki、H. Abe (1.LSI Laboratory, Mitsubishi Electric Corp.)

https://doi.org/10.7567/SSDM.1992.A-1-2