[B-1-2] High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate

Kazuhiro Shimizu、Masayuki Higashimoto、Kyoutarou Nakamura、Osamu Sugiura、Masakiyo Matsumura (1.Department of Physical Electronics, Tokyo Institute of Technology、2.Fujitsu Corp.)

https://doi.org/10.7567/SSDM.1992.B-1-2