[B-2-2] New Drain Conductance Method to Evaluate Impact Ionization Phenomenon in SOI MOSFET

Hiroyuki KURINO, Takeshi HASHIMOTO, Kiyomi HATA, Hiroyuki KIBA, Yasuo YAMAGUCHI, Tadashi NISHIMURA, Mitumasa KOYANAGI (1.Research Center for Integrated Systems, Hiroshima University, 2.LSI Laboratory, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.1992.B-2-2