Electrical Characterization and Analysis of Lateral p-n Interfaces Grown on (111)A GaAs Nonplanar Substrates by Molecular Beam Epitaxy

M. Inai; T. Yamamoto; M. Fujii; D. Lovell; A. Shinoda; K. Fujita; T. Takebe; K. Kobayashi

doi:https://doi.org/10.7567/SSDM.1992.C-1-2

[C-1-2] Electrical Characterization and Analysis of Lateral p-n Interfaces Grown on (111)A GaAs Nonplanar Substrates by Molecular Beam Epitaxy

M. Inai, T. Yamamoto, M. Fujii, D. Lovell, A. Shinoda, K. Fujita, T. Takebe, K. Kobayashi (1.ATR Optical and Radio Communications Research Laboratories)

https://doi.org/10.7567/SSDM.1992.C-1-2

1992 International Conference on Solid State Devices and Materials

[C-1-2] Electrical Characterization and Analysis of Lateral p-n Interfaces Grown on (111)A GaAs Nonplanar Substrates by Molecular Beam Epitaxy