[D-1-3] Submicron SiO2 Hole Filling Characteristics Employing ECR Al Sputtering with High Magnetic Field

N. Morimoto、S. Takehiro、Y. Matsui、I. Utsunomiya、H. Shindo、S. Shingubara、Y. Horiike (1.Dept. of Electrical Engineering, Hiroshima University、2.Faculty of engineering, Fukuyama University)

https://doi.org/10.7567/SSDM.1992.D-1-3