[LD-9] Enhanced Carbon Incorporation in InGaAs Grown at Low Temperature by Metalorganic Molecular Beam Epitaxy (MOMBE)

Jun-ichi Shirakashi、Eisuke Tokumitsu、Makoto Konagai Akifumi Miyano、Ricard T. Yoshioka、Shinji Nozaki、Kiyoshi Takahashi (1.Department of Electrical and Electronic Engineering, Department of Physical Electronics, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1992.LD-9