The Initial Stages of the Thermal Oxidation of Si(001) 2×1 Surface Studied by Scanning Tunneling Microscopy

Masaharu UDAGAWA; Masaaki NIWA; Isao SUMITA

doi:https://doi.org/10.7567/SSDM.1992.PA1-1

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜 1992年8月28日
Tsukuba Center Building, Tsukuba, Japan

[PA1-1] The Initial Stages of the Thermal Oxidation of Si(001) 2×1 Surface Studied by Scanning Tunneling Microscopy

Masaharu UDAGAWA、Masaaki NIWA、Isao SUMITA (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.、2.Matsushita Research Institute Tokyo, Inc.)

https://doi.org/10.7567/SSDM.1992.PA1-1

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