Initial Stage of SiO2/Si Interface Formation on Si(111) Surface

Yoshinari TAMURA; Kazuaki OHISHI; Hiroshi NOHIRA; Takeo HATTORI

doi:https://doi.org/10.7567/SSDM.1992.PA1-2

1992 International Conference on Solid State Devices and Materials

Aug 26, 1992 - Aug 28, 1992
Tsukuba Center Building, Tsukuba, Japan

[PA1-2] Initial Stage of SiO2/Si Interface Formation on Si(111) Surface

Yoshinari TAMURA, Kazuaki OHISHI, Hiroshi NOHIRA, Takeo HATTORI (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology)

https://doi.org/10.7567/SSDM.1992.PA1-2

▲