Nitrogen Dangling Bonds in Hydrogenated Amorphous Silicon Nitride Thin Films

J. Kanicki; W. L. Warren; E. H. Poindexter

doi:https://doi.org/10.7567/SSDM.1992.PA2-4

1992 International Conference on Solid State Devices and Materials

Aug 26, 1992 - Aug 28, 1992
Tsukuba Center Building, Tsukuba, Japan

[PA2-4] Nitrogen Dangling Bonds in Hydrogenated Amorphous Silicon Nitride Thin Films

J. Kanicki, W. L. Warren, E. H. Poindexter (1.IBM Research Division, Thomas J. Watson Research Center, 2.Sandia National Laboratories, 3.US Army ET&DL)

https://doi.org/10.7567/SSDM.1992.PA2-4

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