Lateral Epitaxial Growth of Sputtered Al(110) over SiO2 and Its Electromigration Characteristics

S. Yokoyama; H. Ichikawa; S. Shingubara; M. Koyanagi

doi:https://doi.org/10.7567/SSDM.1992.PA4-1

1992 International Conference on Solid State Devices and Materials

1992年8月26日〜 1992年8月28日
Tsukuba Center Building, Tsukuba, Japan

[PA4-1] Lateral Epitaxial Growth of Sputtered Al(110) over SiO2 and Its Electromigration Characteristics

S. Yokoyama、H. Ichikawa、S. Shingubara、M. Koyanagi (1.Research Center for Integrated Systems, Hiroshima University、2.Faculty of Engineering, Hiroshima University)

https://doi.org/10.7567/SSDM.1992.PA4-1

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